On July 22, according to Fast Technology, Russia's Green City Nanotechnology Center (ZNTC) has successfully developed a prototype of an electron beam lithography machine (ELL) with a design standard of 150nm. The project is a key research and development task under the framework of Russia's national plan for scientific and technological development, codenamed Progress ELL 150. This device is mainly used for manufacturing photomasks, and can also directly draw circuit patterns on substrates without using masks. The 150nm process roughly corresponds to the performance level of Intel's Pentium 4 from 20 years ago. In 2025, ZNTC demonstrated a similar device with 350nm resolution, and has now advanced to 90nm and 130nm technology nodes. Industry experts point out that such equipment is only suitable for small batch production of specialized chips in fields such as aerospace and defense.
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Russia Develops 150nm Lithography Machine, Performance Comparable to Pentium 4 from 20 Years Ago
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