On October 10, Changxin Memory's 4F² DRAM architecture research and development recently made significant progress. Dr. Cao Kanyu, the company's president, delivered a speech at the Fourth Integrated Chips and Chiplet Conference, providing a comprehensive overview of Changxin Memory's technological explorations and accumulations in DRAM devices, 4F² architecture, and hybrid bonding. He officially announced that a new generation of DDR5 RDIMM products, incorporating these advanced technologies, is expected to be launched by the end of the year.
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